The proposed bonding mechanism is polymerization of silanol bonds between wafer pairs. Processes are categorized into direct bonds, anodic bonds, and bonds with intermediate layers. Soi material is certainly today the first large volume demonstration that wafer bonding is a true process step that can enter into demanding mainstream applications. Wafer bonding 217 because of the large number of papers published on wafer bonding over the last decade, we do not give an exhaustive list of references. Direct wafer bonding is a method for fabricating advanced substrates for microelectromechanical systems mems and integrated circuits ic. Silicononinsulator technology for microelectromechanical.
Propagation of wafer bonding infrared camera view of bonding propagating from the tong point in the center outward to the edges of two silicon wafers. The bonding was achieved by heating in an in silicononinsulator by wafer bonding and. Bonded silicon on insulator soi wafers, such as those made by soitec using the smartcut process are now routinely used for different industrial applications. A bonded soi wafer with builtin sealed cavities on the handle wafer or on the buried oxide application areas include e. Wafer bonding and layer splitting for microsystems eecs at uc. Effect of wafer bow and etch patterns in direct wafer bonding. Wafer bonding can be divided into two technological.
Lowtemperature bonding for siliconbased microoptical. In addition, any mechanical failures occurring at the very wafer edge, an area of the wafer typically excluded from inspection, may also impact multiple wafer to wafer bonding. Silicon fusion bonding, silicon on insulator, piezoresitive pressure sensor, mosfet amplifier integration with sensor ipc code. The most typical example of such an advanced substrate is the silicononinsulator soi wafer. Soi material is certainly today the first large volume demonstration that wafer bonding. Representative devices using wafer to wafer bonding.
Chapter 2 layer transfer by ion implantation and wafer bonding. Wafer bonding the insulating layer is formed by directly bonding. Direct wafer bonding consists of connecting two wafer. In this paper, the soi wafer fabrication technique using ioncut process is described. An alternative approach using wafer bonding was developed to address this integration problem by directly bond two wafers at low temperatures. We shipped our first soi silicon on insulator wafer in 2001. The proton irradiation mechanism related to the hydrogen ion implantation is discussed, and the effective wafer cleaning technique for direct wafer bonding wafer pairs with hydrophilic surface and the wafer. The focus behind this book on wafer bonding is the fast paced changes in the research and development in threedimensional 3d integration, temporary bonding and microelectromechanical systems. The ssi layer of 20nm thickness is obtained on an 8in.
Silicononinsulator by wafer bonding and etchback ieee. Examples of such bonding technology include metal diffusion bonding and eutectic bonding. B81b702 1 introduction wafer level bonding of a silicon wafer to another silicon substrate or to a glass wafer. In the present paper an overview of the fundamental aspects involved in. Wafer bonding is an integral part of the fabrication of mems, optoelectronics, and heterogeneous wafer stacks, including silicononinsulator. This also applies when wafers are heavily doped, have a thick lpcvd silicon nitride layer on top or have a lpcvd polysilicon layer of poor quality.
Precise and uniform cavity depth and highsurface quality can easily be achieved by the welldefined thermal oxidation process. Pdf the wafer bonding has been established as a key process used for the fabrication of silicononinsulator soi substrates. Ultrasil soi wafer technology soi wafer double side. Wafer bonding in silicon electronics max planck institute of.
Infrared camera view of bonding propagating from the tong point in the center outward to the edges of two silicon wafers. The direct wafer bonding process involves a coupled physical system, formed by the elastic deformation of the wafers and a thin layer of. Since then we have expanded our product line to include double bonded soi wafer, wafer to wafer bonding, and soi wafers. Soi wafer for sale, price silicononinsulator wafer. While there are various methods to create an inpingaasp epitaxial layer structure onto the soi waveguide wafer heteroepitaxial growth, molecular bonding, adhesive bonding, anodic bonding. Fabrication of strained silicon on insulator ssoi substrates by wafer bonding and layer splitting is described in this paper. Compared to conventional layer transfer methods which employ wafer bonding and polishingetching thinning technique, e. Thermal bonding of oxidized silicon wafers is used to obtain highquality silicon on insulator soi starting material for electronics and sensor applications. Its thickness is in the range of 5 nm to a few micrometers, depending on the device. Wafer bonded cmuts can be fabricated by fusion bonding a silicon and a silicononinsulator soi wafers fig. Wafer bonding molding integration with electronics, fluidics unique to mems packaging and testing. Low temperature wafer level metal thermocompression bonding technology for 3d integration 75 electrical contact and mechanical support to be formed between two wafers in one simultaneous step. Therefore, wafer level bonding processes play a crucial role in the manufacture of mems device.
Buy soi wafer and silicononinsulator wafer single crystal substrate supplier from biotain china, soi wafer wafer for sale and price, please send us an inquiry for good quality and competitive price. We rather refer to the proceedings of a series of symposia devoted to wafer bonding. Wafer bonded cmuts can be fabricated by fusion bonding a silicon and a siliconon insulator soi wafers fig. Process flows and bulk micromachining picture credit. Silicon on insulator soi is produced by etching away all but a few microns of one of the bonded pair. Silicon wafer bonding mechanism for siliconon insulator. Silicon on insulator an overview sciencedirect topics. With stateoftheart application labs and cleanrooms at its headquarters in austria, as well. In 1999, ultrasil started production of dsp double side polished silicon wafers. Sio 2based soi wafers can be produced by several methods. Fusion bonding of rough surfaces with polishing technique for. Low temperature waferlevel metal thermocompression.
Overview of recent direct wafer bonding advances and. A method for producing a soi wafer that includes implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer formed of a silicon single crystal to form an ion implanted layer, bonding the ionimplanted surface of the bond wafer to a surface of a base wafer. Soi wafers offer many advantages over conventional silicon wafers. Pdf the wafer bonding has been established as a key process used for the fabrication of siliconon insulator soi substrates. In wafer bonding work directed toward soi silicononinsulator technology, an insulating material, usually siosub 2, present on one or both silicon wafers is sandwiched between the wafers upon bonding. After bonding, the inp growth substrate is removed, and fig.
In the fabrication of soi substrates by wafer bonding, the silicon wafer. The use of silicononinsulator soi technology in microelectronics is proliferating and is ready to be applied in a growing number of ic fabrication situations. The cavity is formed by wet etching the thermally grown sio 2 layer on top of the. A novel silicononinsulator technique utilizing the bonding of oxidized silicon wafers has been investigated. We began with bonded and polished soi bpsoi waters by precisely controlled grinding and. In soi, a thin single crystal line silicon layer is employed to make devices. Wafer bonding is an integral part of the fabrication of mems, optoelectronics, and heterogeneous wafer stacks, including siliconon insulator.
Simox separation by implantation of oxygen uses an oxygen ion beam implantation process followed by high temperature annealing to create a buried sio 2 layer. Wafer bonding is a packaging technology on wafer level for the fabrication of microelectromechanical systems mems, nanoelectromechanical systems nems, microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. Spontaneous direct bonding of thick silicon nitride university of. The cavity is formed by wet etching the thermally grown sio 2 layer on top of the silicon substrate. Pdf wafer bonding is an integral part of the fabrication of mems. These processes have an impact in packaging and structure design. From physical mechanisms towards advanced modeling. Wafer bonding allows a new degree of freedom in design and fabrication of soi material combinations 1,2,3 that previously would have been excluded because. The wafer bonding has been established as a key process used for the fabrication of silicononinsulator soi substrates. Recent advances have led to the emergence and development of bonded structures suitable for new applications such as for microelectronics, microtechnologies, sensors, mems, optical devices, biotechnologies and 3d integration. An overview of the technology is followed by a detailed description of the bonding technique and the ensuing wafer. Improved performance offered and low operating voltage required by soi wafers, growing use of soi wafers in consumer electronics, and increasing investments by wafer manufacturers and. Application of hydrogen ion beams for soi wafer formation. Here, this wafer level vacuum assembly is carried out by bonding of wafers with cavities to house the detectors in the hermetically sealed vacuum.
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